To our customers,
Old Company Name in Catalogs and Other Documents
On April 1 st , 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1 st , 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
NP82N055PUG-E1-AY MOSFET N-CH 55V 82A TO-263
NP82N06MLG-S18-AY MOSFET N-CH TO-220
NP82N06NLG-S18-AY MOSFET N-CH 60V 82A TO-262
NP82N06PDG-E1-AY MOSFET N-CH 60V 82A TO-263
NP83P04PDG-E1-AY MOSFET P-CH -40V 83A TO-263
NP83P06PDG-E1-AY MOSFET P-CH -60V 83A TO-263
NP84N075MUE-S18-AY MOSFET N-CH 75V 84A TO-220
NP88N03KDG-E1-AY MOSFET N-CH 30V 88A TO-263
相关代理商/技术参数
NP82N055PUG-E1-AY 功能描述:MOSFET N-CH 55V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP82N055PUG-E1-AY/JM 制造商:Renesas Electronics Corporation 功能描述:
NP82N055PUG-E2-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/82A
NP82N06MLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N06MLG-S18-AY 功能描述:MOSFET N-CH TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP82N06NLG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N06NLG-S18-AY 功能描述:MOSFET N-CH 60V 82A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP82N06PDG-E1-AY 功能描述:MOSFET N-CH 60V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件